A Method of Using Organometallic Single Source Precursors to Make Aluminum Oxide or Other Inorganic Coatings (RFT-65)
A new family of organometallic compounds has been developed by NDSU Scientists. These compounds contain a metal such as aluminum and a group 16 element such as oxygen in a stoichiometric ratio of 2:3 and can be decomposed to produce an inorganic compound such as A1203 (aluminum oxide), eliminating the organic portion of the original compound. Aluminum oxide is the only material developed to date under this program, although it may be expanded to other very useful compounds. This technology has completed initial laboratory testing. Scale-up is required, but no difficulties are foreseen.
The advantages of the invention include the relatively innocuous nature of the precursor compound and the effluent organic compounds generated during decomposition and the low temperature of decomposition (less than 100oC).
- Proposed for decoupling capacitor applications, or used as radiation resistive films for semiconductor devices.
- When used with silicon dioxide, the aluminum oxide can form insulator films in MOSFET and MISFET applications.
- May be useful in protecting materials against corrosion effects.
- Applications in chemical mechanical polishing of IC chips and other devices such as hard disk drives.
- Multiple applications due to flexibility in form: powders, films, coatings and electronic materials.
This technology is patented (U.S. Patent No. 6,124,427), and available for exclusive licensing/partnering opportunities.
Henry Nowak, Technology Manager
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