Low Band Gap Polymers (RFT-237)

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Invention Summary

This invention describes the preparation of a new low band-gap (~0.5eV) conjugated polymer, accomplished via the electro-polymerization of Acenophto[1,2-b]thieno[3,4-e]pyrazines. This polymer has an application in light emitting-diodes (LEDs),photovoltaic devices, sensors, electrochromic devices, and field effect transistors (FET).  The advantage of utilizing conjugated polymers in such applications is the ability to tune the properties of such materials at the molecular level. Control of polymer band gap is an important property in the production of technologically useful materials.;

Patents

US Patent No. 7,888,452 "Low Band Gap Semiconducting Polymers"

Contact

Henry Nowak, Technology Manager
hnowak@ndsurf.org
(701)231-8173

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